THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY INCLUDING THE SAME

摘要

A thin film transistor and a flat panel display including the same are provided to reduce effectively a leakage current by reducing kink current, horizontal electric field, and band bending. A semiconductor layer having a width and a length is formed on a substrate(10). The semiconductor layer includes a source region, a first channel region(20a), a first dopoing region(20c), a second channel region, and a drain region(20e). The first width of the first channel region is different from the second width of the second channel region. A gate insulating layer is formed on the semiconductor layer. A gate electrode is formed on the gate insulating layer. The gate electrode includes a first gate electrode(40a) formed at a position facing the first channel region and a second gate electrode(40b) formed at a position facing the second channel region.