发明名称 PLASMA PROCESSING APPARATUS
摘要 Gas discharge ports (15) uniformly formed at a plurality of areas on an inner circumference side of a chamber (1) are connected to an annular communicating path (13), i.e., a space formed by a step section (18) and a step section (19), at a contact surface section between the upper end of a lower chamber (2) and the lower end of an upper plate (27) of a cover section (30) through a gas introducing path (14). The annular communicating path (13) has a function as a gas distributing means for uniformly distributing and supplying a gas to each gas introducing path (14), and is connected to a gas supply source (16), through a gas path (12) formed in a vertical direction at a discretionary area in a wall of the lower chamber (2) and a gas introducing port (72). ® KIPO & WIPO 2008
申请公布号 KR20080021669(A) 申请公布日期 2008.03.07
申请号 KR20077029423 申请日期 2007.03.05
申请人 TOKYO ELECTRON LIMITED 发明人 YAMASHITA JUN
分类号 H01L21/31;H01L21/3065;H05H1/46 主分类号 H01L21/31
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