NON-VOLATILE MEMORY CELL USING MECHANICAL SWITCH AND ARRAY THEREOF

摘要

A non-volatile memory cell using a mechanical switch and an array thereof are provided to reduce power consumption by performing an operation at a low voltage. A dielectric layer(202) is formed on a substrate(201). A gate electrode(203) is formed on the dielectric layer. A source electrode(204) is separated from one side of the gate electrode and is formed on the dielectric layer. A drain electrode(205) is separated from the other side of the gate electrode and is formed on the dielectric layer. A moving electrode includes an adhesive part(206) formed on the source electrode and a moving part(207) connected electrically to the adhesive part and extended to an upper part of the drain electrode. A protrusion part is formed at the upper part of the drain electrode.