| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to easily isolate a metal wire from a source contact plug by forming an isolation layer on an upper portion of the source contact plug. A gate pattern is formed on a semiconductor substrate(100). A dielectric is formed on the semiconductor substrate including the gate pattern. The dielectric includes plural contact holes. Plural contact plugs(112a,112c) are respectively formed in the contact holes. A first isolation layer(117) is formed on parts of the contact plug of the contact plugs. A second isolation layer(119) exposes the remaining contact plugs of the contact plugs and defines a region on which metal wires are formed. The metal wires(122a-122c) are formed between the second isolation layers. The first isolation layer and the second isolation layer are laminated structures of a nitride layer and an oxide layer. A width of the first isolation layer is wider than that of the lower contact plug. |
