SEMICONDUCTOR MEMORY DEVICE WITH IMPROVED STRAPPING CONTACT PITCH

摘要

A semiconductor memory device with an improved strapping contact pitch is provided to prevent a contact bridge by changing a contact arrangement structure in a strapping region. A semiconductor substrate has plural strapping regions(105a,105b,105c) respectively arranged between plural cell regions(101a,101b,101c) and adjacent cell regions in a first direction. Plural active patterns(111-126) are extended from the cell regions to the strapping regions in the first direction. The active regions are separated in a second direction that is intersected with the first direction. Plural first wire lines are extended from the cell regions to the strapping regions in the first direction. The first wire lines are overlapped with the active patterns to be separated in the second direction. Plural second wire lines are extended in the second direction on upper portions of the cell regions to be intersected with the active patterns and word lines(131-146). Plural memory cells(161-168) are respectively arranged at intersected sections of the first wire lines and the second wire lines of the cell regions. Plural strapping contacts are arranged in a zigzag form to electrically contact the active patterns to the first wire lines in the strapping regions.