| 摘要 |
<p>A display apparatus and a manufacturing method thereof are provided to reduce leakage current from a polycrystalline silicon electrode with a simple structure to exhibit stable storage characteristics. A polycrystalline silicon electrode(18) is formed on an insulating substrate(11), and a gate insulating film(16) is formed on the polycrystalline silicon electrode. A gate metal electrode(17) is formed on the gate insulating film at a position opposite to the polycrystalline silicon electrode. The gate metal electrode partly or entirely covers an edge of the polycrystalline silicon electrode when viewed from a top. Provided that a distance from an edge of the polycrystalline silicon electrode to an edge of the gate metal electrode is Y, a film thickness of the polycrystalline silicon electrode is a, a film thickness of the gate insulating film is b, and a film thickness of the gate metal electrode is c, c is larger than a and b.</p> |
