| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for suppressing the generation of a void in a through-electrode without requiring any time for the formation of the through-electrode, and to provide a method for manufacturing this semiconductor device. <P>SOLUTION: The semiconductor device 1 includes an insulating or semiconductor layer 11 formed with a hole 111 and a through-electrode 12 installed in the hole 111 of the layer 11. The through-electrode 12 includes a seed layer 121 and a plating layer 122. The bottom face 111A of the hole 111 is covered with the seed layer 121. Also, a first region is not covered from the opening of the hole 111 to a predetermined position between the opening of the hole 111 and the bottom face 111A of the hole 111 on a side face 111B of the hole 111, and a second region is covered with the seed layer 121 except for the first region (non-covering region) 111B1. At least part of the seed layer 121 and the non-covering region 111B1 is covered with the plating layer 122. <P>COPYRIGHT: (C)2008,JPO&INPIT |
