| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resin for a protecting film for semiconductor resist, which can form a homogeneous thin film having water resistance, solubility in an alkaline developing liquid in an alkaline developing process, and high transparency to rays to be used, particularly an UV ray, upon photo-exposure, whereby photo-exposure to a resist film is not prohibited. <P>SOLUTION: A solution containing a monomer having a group soluble in an alkaline developing liquid and a monomer having a hydrophobic group and a solution of a radical polymerization initiator are introduced into solvents heated at respective polymerization temperature, whereby there is produced a resin for a protecting film of a semi-conductor resist usable in lithography by a liquid immersion photo-exposure method. In the method, the radical polymerization initiator contains no cyano group nor aromatic ring in its molecule. <P>COPYRIGHT: (C)2008,JPO&INPIT |
