发明名称 |
PROCESSING GAS SUPPLYING METHOD AND DEVICE, SUBSTRATE PROCESSING METHOD AND DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIA |
摘要 |
PROBLEM TO BE SOLVED: To provide a processing gas supplying method for stably supplying the processing gas comprising an organic compound, a substrate processing method using the processing gas supplying method, a method for manufacturing a semiconductor device using the substrate processing method, a processing gas supplying device for stably supplying the processing gas comprising the organic compound, a substrate processing device using the processing gas supplying device, and a recording media with the program for operating the substrate processing device written. SOLUTION: The processing gas supplying method comprises a first step for evaporating and sublimating a raw material comprising the organic compound, a second step for generating a first reaction for monomerizing the monomer to a multimer or a second reaction for polymerizing the monomer to the polymer by controlling the pressure or the temperature of the processing gas, and a third step for supplying the processing gas to the predetermined processing space. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008053456(A) |
申请公布日期 |
2008.03.06 |
申请号 |
JP20060228125 |
申请日期 |
2006.08.24 |
申请人 |
FUJITSU LTD;TOKYO ELECTRON LTD;EBARA CORP |
发明人 |
ISHIKAWA KENJI;MIYOSHI SHUSUKE;TATEISHI HIDEKI;HAYASHI MASAKAZU;NISHIKAWA NOBUYUKI |
分类号 |
H01L21/302;H01L21/3205;H01L21/768;H01L23/52 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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