发明名称 PROCESSING GAS SUPPLYING METHOD AND DEVICE, SUBSTRATE PROCESSING METHOD AND DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIA
摘要 PROBLEM TO BE SOLVED: To provide a processing gas supplying method for stably supplying the processing gas comprising an organic compound, a substrate processing method using the processing gas supplying method, a method for manufacturing a semiconductor device using the substrate processing method, a processing gas supplying device for stably supplying the processing gas comprising the organic compound, a substrate processing device using the processing gas supplying device, and a recording media with the program for operating the substrate processing device written. SOLUTION: The processing gas supplying method comprises a first step for evaporating and sublimating a raw material comprising the organic compound, a second step for generating a first reaction for monomerizing the monomer to a multimer or a second reaction for polymerizing the monomer to the polymer by controlling the pressure or the temperature of the processing gas, and a third step for supplying the processing gas to the predetermined processing space. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008053456(A) 申请公布日期 2008.03.06
申请号 JP20060228125 申请日期 2006.08.24
申请人 FUJITSU LTD;TOKYO ELECTRON LTD;EBARA CORP 发明人 ISHIKAWA KENJI;MIYOSHI SHUSUKE;TATEISHI HIDEKI;HAYASHI MASAKAZU;NISHIKAWA NOBUYUKI
分类号 H01L21/302;H01L21/3205;H01L21/768;H01L23/52 主分类号 H01L21/302
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