| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which level difference can be prevented between the surface of a semiconductor substrate and the upper face of a gate electrode during etch-back of a conductive film as a gate electrode. SOLUTION: The method of manufacturing a semiconductor device includes a step to form a silicon nitride film 102a on a semiconductor substrate 51, a step to provide an opening 103 with a specified pattern in the silicon nitride film 102a and to form a mask 102, a step to anisotropically etch the semiconductor substrate 51 while using the mask 102 as an etching mask to form a trench 54, a step to use the mask 102 as a selection oxidation mask to form a gate insulation film 104 on the inner wall of the trench 54, a step to remove the mask 102, a step to form a conductive film 56 on the semiconductor substrate 51 and fill the trench 54 with the conductive film 56, and a step to etch back the conductive film 56 until the surface of the semiconductor substrate 51 is exposed over. COPYRIGHT: (C)2008,JPO&INPIT
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