SUBSTRATE TREATMENT APPARATUS, SUBSTRATE TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus suitable for forming an electroconductive film for impregnating a connection hole such as a contact hole or a via hole; a substrate treatment method therefor; and a method for manufacturing a semiconductor device. SOLUTION: This substrate treatment apparatus comprises a chamber 2 and gas introduction pipes 51 to 54 for supplying a gas into the chamber 2. Gas supply sources 11 to 14 which store the gas to be supplied into the chamber 2 are connected to each one end of the gas introduction pipes 51 to 54. Opening/closing valves 21 to 24 and 41 to 44, and mass flow controllers 31 to 34 for controlling a flow rate of the gas to a predetermined flow rate exist in the gas introduction pipes 51 to 54 respectively. The gas introduction pipes further have signal delay circuits 91 and 92 therein which make the mass flow controllers 31 to 34 start a control of the flow rate after the opening/closing valves 21 to 24 have been opened, when starting a supply of the gas to the chamber 2. COPYRIGHT: (C)2008,JPO&INPIT