发明名称 Hexagonal Wurtzite Type Single Crystal, Process For Producing The Same, And Hexagonal Wurtzite Type Single Crystal Substrate
摘要 Provided is a single crystal with a hexagonal wurtzite structure which is useful as a substrate for various devices and has high purity and is uniform. The single crystal with a hexagonal wurtzite structures which is obtained by a crystal growth on at least an m-plane of a columnar seed crystal and represented by AX (A representing an electropositive element and X representing an electronegative element) is characterized in that a variation in the concentration of a metal other than the electropositive element A and having a concentration of 0.1 to 50 ppm is within 100%.
申请公布号 US2008056984(A1) 申请公布日期 2008.03.06
申请号 US20050576408 申请日期 2005.09.21
申请人 TOKYO DENPA CO., LTD.;MITSUBISHI CHEMICAL CORPORATION 发明人 YOSHIOKA KENJI;YONEYAMA HIROSHI;MAEDA KATSUMI;NIIKURA IKUO;SATO MITSURU;ITO MASUMI;ORITO FUMIO
分类号 C30B29/16;C30B7/10 主分类号 C30B29/16
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