发明名称 |
Hexagonal Wurtzite Type Single Crystal, Process For Producing The Same, And Hexagonal Wurtzite Type Single Crystal Substrate |
摘要 |
Provided is a single crystal with a hexagonal wurtzite structure which is useful as a substrate for various devices and has high purity and is uniform. The single crystal with a hexagonal wurtzite structures which is obtained by a crystal growth on at least an m-plane of a columnar seed crystal and represented by AX (A representing an electropositive element and X representing an electronegative element) is characterized in that a variation in the concentration of a metal other than the electropositive element A and having a concentration of 0.1 to 50 ppm is within 100%.
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申请公布号 |
US2008056984(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
US20050576408 |
申请日期 |
2005.09.21 |
申请人 |
TOKYO DENPA CO., LTD.;MITSUBISHI CHEMICAL CORPORATION |
发明人 |
YOSHIOKA KENJI;YONEYAMA HIROSHI;MAEDA KATSUMI;NIIKURA IKUO;SATO MITSURU;ITO MASUMI;ORITO FUMIO |
分类号 |
C30B29/16;C30B7/10 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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