发明名称 |
Strained semiconductor device and method of making same |
摘要 |
A method of making a semiconductor device is disclosed. A first heavily doped region of a first conductivity type is implanted in a first portion of the semiconductor body and a first upper surface anneal is performed. After performing the first upper surface anneal, a second heavily doped region of a second conductivity type is implanted in a second portion of the semiconductor body. After implanting the second heavily doped region, a second upper surface anneal is performed.
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申请公布号 |
US2008057636(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
US20060521809 |
申请日期 |
2006.09.15 |
申请人 |
LINDSAY RICHARD;KIM JOO-CHAN |
发明人 |
LINDSAY RICHARD;KIM JOO-CHAN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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