发明名称 ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>This invention provides an active matrix substrate comprising a base material and a thin-film transistor with an amorphous silicon film provided on the base material. The active matrix substrate is characterized in that the amorphous silicon surface has been silylated, and an organic protective film is provided on the surface of the silylated amorphous silicon film. There is also provided a method for manufacturing the active matrix substrate, characterized by comprising the step of bringing the surface of an amorphous silicon film in a thin-film transistor formed on a base material into contact with a silylating agent to silylate the surface, the step of forming a resin film using a radiation-sensitive resin composition on the surface of the silylated amorphous silicon film, and the step of applying an active radiation to the resin film to form a latent image pattern in the resin film and then bringing a developing solution into contact with the resin film to visualize the latent image pattern to conduct patterning of the resin film.</p>
申请公布号 WO2008026750(A1) 申请公布日期 2008.03.06
申请号 WO2007JP67092 申请日期 2007.08.27
申请人 ZEON CORPORATION;HANMURA, MASAHIRO;KATO, TAKEYOSHI 发明人 HANMURA, MASAHIRO;KATO, TAKEYOSHI
分类号 H01L29/786;G02F1/1368 主分类号 H01L29/786
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