| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor memory in which an extending conductive plug is formed on each of opposite sides of its active region. SOLUTION: The method for manufacturing the semiconductor memory include steps: for forming a plurality of stripe blocks in dielectric structure of a substrate and then forming first etching mask which exposes the sidewall of the stripe blocks locally; for removing the stripe blocks locally by using the first etching mask and forming second etching mask by cutting down the width of the stripe blocks; and for forming a plurality of apertures in the dielectric structure by removing the portions of dielectric structure not covered by the second etching mask, and then forming the conducting plug in the aperture. The plurality of the apertures have a plurality of first apertures disposed between first blocks and a plurality of second apertures disposed between second blocks. The first apertures and the second apertures project from the opposite sides of the active region, respectively. COPYRIGHT: (C)2008,JPO&INPIT |
