| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrode that is appropriately connected to both of p-type and n-type group III-V nitride semiconductor layers. SOLUTION: In the field effect transistor, a nitride semiconductor lamination structure section 2 is arranged on a sapphire substrate 41. The nitride semiconductor lamination structure section 2 comprises: an n-type GaN layer 5; a p-type GaN layer 6; and an n-type GaN layer 7. A trench 16 having a V-shaped section is formed at the nitride compound semiconductor lamination structure section 2, a gate insulation film is formed on a wall surface 17 in the trench 16, and further a gate electrode 20 is formed so that it opposes the wall surface 17 while sandwiching the gate insulation film 19. A source electrode 25 is composed by joining a first electrode section 251 in ohmic contact with the p-type GaN layer 6 and a second electrode section 252 in ohmic contact with the n-type GaN layer 7. The first electrode section 251 and the second electrode section 252 are made of different metal materials. COPYRIGHT: (C)2008,JPO&INPIT
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