| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a fault resulting from a seam in a deposited film in a semiconductor device. SOLUTION: The method for manufacturing a semiconductor device comprises the steps of (A) forming a trench 13 on the front surface FS of a semiconductor substrate 11 where a nitride film 12b is formed on the rear surface BS, (B) depositing an insulating film 15 to fill the trench 13, (C) removing the nitride film 12b on the rear surface BS of the semiconductor substrate 11 after the step (B), and (D) conducting annealing before the etching of the insulating film 15 after the step (C). COPYRIGHT: (C)2008,JPO&INPIT
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