发明名称 |
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A display device and a method of manufacturing the display device are provided to plate the surface of a source line of a pixel to reduce the resistance of the source line so as to reduce power consumption of the display device. A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor layer formed on an insulating substrate, an insulating layer formed on the semiconductor layer and a gate electrode formed on the insulating layer. The semiconductor device further includes a pixel having a first n-channel thin film transistor(4312), a driving circuit having a second n-channel thin film transistor and a p-channel thin film transistor, and a terminal(4310). The first n-channel thin film transistor has a source line(4311) coated with material having resistance lower than the gate electrode. The terminal is coated with material having resistance lower than the gate electrode. |
申请公布号 |
KR20080021088(A) |
申请公布日期 |
2008.03.06 |
申请号 |
KR20080009542 |
申请日期 |
2008.01.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;KUWABARA HIDEOKI;FUJIKAWA SAISHI |
分类号 |
G02F1/136;G02F1/1362;H01L21/77;H01L21/84;H01L27/12 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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