发明名称 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A display device and a method of manufacturing the display device are provided to plate the surface of a source line of a pixel to reduce the resistance of the source line so as to reduce power consumption of the display device. A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor layer formed on an insulating substrate, an insulating layer formed on the semiconductor layer and a gate electrode formed on the insulating layer. The semiconductor device further includes a pixel having a first n-channel thin film transistor(4312), a driving circuit having a second n-channel thin film transistor and a p-channel thin film transistor, and a terminal(4310). The first n-channel thin film transistor has a source line(4311) coated with material having resistance lower than the gate electrode. The terminal is coated with material having resistance lower than the gate electrode.
申请公布号 KR20080021088(A) 申请公布日期 2008.03.06
申请号 KR20080009542 申请日期 2008.01.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN;KUWABARA HIDEOKI;FUJIKAWA SAISHI
分类号 G02F1/136;G02F1/1362;H01L21/77;H01L21/84;H01L27/12 主分类号 G02F1/136
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