| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an infrared detector of thermal-type provided with a structure of micro air bridge for supporting the detector element, capable of enhancing the sensitivity, improving the deterioration in performance and reducing the chipping defects, and to provide its manufacturing method. <P>SOLUTION: The sensor part of the infrared detection device of thermal-type forms the micro air bridge structure 11 on the SOI substrate 27 by the ICP dry etching process, the semiconductor diode part 18 comprising a plurality of p-n junction diodes in its active region 12 is formed, and the metal reflecting film 15 and the infrared-absorbing layer 14 are provided there, in this order. The metal reflecting film 15 is used as a heater at annealing for improving the degradation performance of the p-n junction, also is used as the reflecting film for converging the irradiation infrared rays on the infrared-absorbing layer 13 for sensitivity intensifying reflecting film. For the wiring on the wafer cutting line provided with the sensor part, the diffused resistance wiring 33 and 34 are used in the substrate, and the problem of chipping defects are solved by eliminating the wiring of metal films. <P>COPYRIGHT: (C)2008,JPO&INPIT |
