发明名称 NEGATIVE RESIST MATERIAL AND PATTERNING PROCESS USING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a negative resist material, in particular, a chemically amplified negative resist material that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist materials, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist material. <P>SOLUTION: The negative resist material comprises, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by general formula (1). <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008052254(A) 申请公布日期 2008.03.06
申请号 JP20070151592 申请日期 2007.06.07
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;TAKEDA TAKANOBU
分类号 G03F7/038;C08F212/14;H01L21/027 主分类号 G03F7/038
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