发明名称 METHOD OF PRODUCING ACTIVE MATRIX SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a production method for an active matrix substrate in which the contact resistance between an electrode consisting of a Cr film or an Al film and a transparent conductive film formed in a contact hole can be reduced in spite of simple steps. <P>SOLUTION: The invention provides the production method for the active matrix substrate in which a plurality of the contact holes are formed by a one-mask process so as to reach metal films 12, 14 which are present at different depth positions in an insulating layer 13, 15 and are not evaporated by dry etching using a fluorine-containing gas. The method includes a step of performing dry etching using mixed gas of CHF3, CF4 and O2 to form the plurality of contact holes, a step of subjecting the plurality of contact holes to oxygen ashing, and a step of forming a transparent conductive film in the plurality of contact holes. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008052255(A) 申请公布日期 2008.03.06
申请号 JP20070154003 申请日期 2007.06.11
申请人 NEC LCD TECHNOLOGIES LTD 发明人 YANASE KIYOSHI;DOI SATOSHI
分类号 G09F9/00;G02F1/1368;G09F9/30;H01L21/336;H01L21/768;H01L29/786 主分类号 G09F9/00
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