| 摘要 |
PROBLEM TO BE SOLVED: To improve a write/erasing characteristic, a charge retention characteristic, and a disturbing-restraining characteristic of a nonvolatile memory. SOLUTION: The nonvolatile memory comprises a tunnel insulating film 20 with an oxide silicon film (a second insulating film 22) and a film stack of an insulating film (a first insulating film 21, a third insulating film 23) other than the oxide silicon film constituted. The conditions for decreasing a leakage current of a control gate at the time of applying 0 V, decreasing a leakage current flowing at the time of disturbing in a semiselective mode, and increasing the current flowing at the end of the writing limit are specified with such parameters as various operating voltage, an interlayer film capacitance, a threshold value at the end of the writing, a threshold value at the end of erasing, an initial threshold value, a relative permittivity, a barrier height, and a film thickness of the film stack as parameters. COPYRIGHT: (C)2008,JPO&INPIT
|
