发明名称 METHOD OF INSPECTING DEFECT FOR ELECTROLUMINESCENCE DISPLAY APPARATUS, DEFECT INSPECTION APPARATUS, AND METHOD OF MANUFACTURING ELECTROLUMINESCENCE DISPLAY APPARATUS USING DEFECT INSPECTION METHOD AND APPARATUS
摘要 A dark spot defect caused by short-circuiting of an EL element is detected based on an emission brightness or a current flowing through the EL element when an element driving transistor which controls a drive current to be supplied to the EL element is operated in its linear operating region and the EL element is set to an emission level. A dim spot defect caused by a characteristic variation of the element driving transistor can be detected based on a current flowing through the EL element when the element driving transistor is operated in its saturation operating region and the EL element is set to the emission level. When an abnormal display pixel is detected based on an emission brightness, a pixel which is determined as an abnormal display pixel and which is not determined as a dark spot defect during a dark spot inspection is determined, and the pixel is detected as a dim spot defect caused by the characteristic variation of the element driving transistor.
申请公布号 US2008055211(A1) 申请公布日期 2008.03.06
申请号 US20070849825 申请日期 2007.09.04
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD. 发明人 OGAWA TAKASHI
分类号 G09G3/30 主分类号 G09G3/30
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