发明名称 |
PHASE CHANGE RANDOM ACCESS MEMORY DEVICE AND RELATED METHODS OF OPERATION |
摘要 |
A method of operating a phase change random access memory (PRAM) device comprises performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.
|
申请公布号 |
US2008055971(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
US20070834845 |
申请日期 |
2007.08.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYE-JIN;LEE KWANG-JIN;KIM DU-EUNG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|