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经营范围
发明名称
MEM suspended gate non-volatile memory
摘要
A carrier storage node such as a floating gate is formed on a moving electrode with a control gate to form a suspended gate non-volatile memory, reducing floating gate to floating gate coupling and leakage current, and increasing data retention.
申请公布号
US2008055976(A1)
申请公布日期
2008.03.06
申请号
US20060513581
申请日期
2006.08.31
申请人
MICRON TECHNOLOGY, INC.
发明人
ARITOME SEIICHI
分类号
G11C11/34
主分类号
G11C11/34
代理机构
代理人
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地址
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