| 摘要 |
A flash memory device, a system including a flash memory device, a method for operating a flash memory cell, and an apparatus for operating a flash memory cell include applying a first bit line voltage to a bit line coupled to the cell, applying a first test voltage to a word line coupled to the cell, storing a first threshold voltage value for the cell, applying a second test voltage to the word line, storing a second threshold voltage value for the cell, and determining a programming pulse voltage for the cell from the first and second stored threshold voltage values.
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