| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC substrate in which a spiral pit is small and surface planarity is excellent; and to provide a method for manufacturing the SiC substrate. SOLUTION: The method for manufacturing a silicon carbide substrate has a step terrace structure in which a main surface forming a semiconductor layer is composed of a plane terrace and a step, the plane orientation of the main surface of a material substrate is inclined by 0.03°to 1°from a (0001) plane, and hydrogen gas etching is applied to the main surface of the substrate at 1,250 to 1,700°C. COPYRIGHT: (C)2008,JPO&INPIT
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