| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in current drivability and improved in performance, by applying stress to a channel-forming region in a direction whereby the current drivability of a transistor is further improved. SOLUTION: The semiconductor device includes the transistor, having a semiconductor substrate, an element isolation insulating film 2 sectioning an active region, a gate insulating film 7a formed in the active region, a gate electrode 8a formed on the gate insulating film 7a, a source-drain region 11a formed in the semiconductor substrate on both sides of the gate electrode 8a, and a channel-forming region, formed in the active region between the source region and drain region. The element isolation insulating film 2 includes a tensile stress film that applies tensile stress to the channel-forming region and a compressive stress film that applies compressive stress, or is formed of the tensile stress film or compressive stress film, while the surface of the tensile stress film or compressive stress film is formed at a position lower than the surface of the active region. COPYRIGHT: (C)2008,JPO&INPIT
|
