| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the reliability of a dielectric formed on the pore bottom more reduces as pores for capacitors, etc. are more fined and deepened on a semiconductor substrate in an ALD film forming process using a longitudinal batch processor advantageous in improving the throughput. SOLUTION: The purge step after feeding a raw material gas and a reactive gas is composed of a vacuum purge and a gas purge steps, and a dielectric is formed by an ALD film forming method consisting of a gas flow sequence of more divided reactive gas feed steps. This forms a high reliability dielectric even on a deep pore bottom to contribute to the reliability improvement of a capacitor and a semiconductor device. COPYRIGHT: (C)2008,JPO&INPIT
|
