发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which read is performed efficiently and high speed operation can be performed. SOLUTION: The semiconductor memory device has memory elements. word lines connected to the memory element, a pair of bit lines connected to the memory element and including selection side bit line connected to a selected bit line and non-selection side bit lines connected to memory elements being not selected, first and second sense amplifiers connected to the pair of bit lines, and a reset circuit in which the potential of the selection side bit line read by either of the first and the second sense amplifiers is made a reset potential of the next read cycle, the non-selection side bit line is made to coincide with the reset potential. thereby, the pair of bit lines is reset to the reset potential of the next read cycle. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008052903(A) 申请公布日期 2008.03.06
申请号 JP20070262337 申请日期 2007.10.05
申请人 FUJITSU LTD 发明人 TAKEMAE YOSHIHIRO;TAGUCHI MASAO;NAKANO MASAO;MOCHIZUKI HIROHIKO;TOMITA HIROYOSHI;MATSUZAKI YASURO;AIKAWA TADAO
分类号 G11C11/4091;G11C11/4099 主分类号 G11C11/4091
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