| 发明名称 |
Processing with Reduced Line End Shortening Ratio |
| 摘要 |
A method for forming device features with reduced line end shortening (LES) includes trimming the device feature to achieve the desired sub-ground rule critical dimension during the etch to form the device feature.
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| 申请公布号 |
US2008054477(A1) |
申请公布日期 |
2008.03.06 |
| 申请号 |
US20070843629 |
申请日期 |
2007.08.22 |
| 申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
CONG HAI;LOH WEI LOONG;GOPAL KRISHAN;ZHANG XIN;ZHOU MEI SHENG;YELEHANKA PRADEEP RAMACHANDRAMURTHY |
| 分类号 |
H01L23/48;H01L21/311 |
主分类号 |
H01L23/48 |
| 代理机构 |
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| 主权项 |
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