| 摘要 |
The semiconductor layer structure includes an active layer ( 6 ) and a superlattice ( 9 ) composed of stacked layers ( 9 a , 9 b) of III-V compound semiconductors of a first (a) and at least one second type (b). Adjacent layers of different types in the superlattice ( 9 ) differ in composition with respect to at least one element. The layers ( 9 a , 9 b) have predefined layer thicknesses, such that the layer thicknesses of layers ( 9 a) of the first type (a) and of the layers ( 9 b) of the second type (b) increase from layer to layer with increasing distance from an active layer ( 6 ). An increasing layer thickness within the layers of the first and the second type (a, b) is suitable for adapting the electrical, optical and epitaxial properties of the superlattice ( 9 ) to given requirements in the best possible manner.
|
