| 摘要 |
A cleaning composition for contact holes is provided to remove polymers remaining in the contact holes of a semiconductor device formed through a dry etching process while not adversely affecting the underlying layers. A cleaning composition for contact holes comprises: 0.5-5 wt% of TEMPO(2,2,6,6-tetramethylpiperidine-1-oxyl free radical) derivative; 0.01-1 wt% of ammonium fluoride; 0.0001-0.01 wt% of an anionic surfactant; 0.1-5 w% of a metal anti-corrosive agent; and the balance amount of water. The TEMPO derivative is at least one selected from the group consisting of 4-hydroxy-TEMPO, 4-hydroxy-TEMPO benzoate, 4-hydroxy-TEMPO-d17, 4-methoxy-TEMPO, 4-amino-TEMPO, 4-(2-iodoacetamino)-TEMPO, 4-carboxy-TEMPO, 4-oxo-TEMPO, 4-oxo-TEMPO-d16-1-15N, 4-cyano-TEMPO and 4-maleimido-TEMPO. |
