| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymeric compound appropriate for a base resin of a positive resist material having a high resolution exceeding a conventional positive resist material, an excellent pattern shape after exposure, and further exhibiting excellent etching resistance, particularly of a chemically amplified positive resist material, a positive resist material and a pattern forming method using the same. <P>SOLUTION: The polymeric compound is characterized by having at least a repeating unit of a substitutable hydroxystyrene, and a repeating unit of a substitutable hydroxyvinylnaphthalene, represented by general formulae (1). <P>COPYRIGHT: (C)2008,JPO&INPIT |
