| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having improved reliability of contact resistance and also to provide a method for manufacturing the same device. SOLUTION: The semiconductor device includes a semiconductor substrate on which a pair of element separating film 11 and a resistance region 12 to be formed between the pair of element separating films; a transistor gate 2 formed in the external side of the pair of element separating film 11 on the semiconductor substrate; a deposition layer formed on the resistance region of the semiconductor substrate; and an interlayer film 4 formed on the semiconductor substrate, transistor gate 2, and deposition layer, allowing formation of a contact 41 between the deposition layer and the transistor gate 2. COPYRIGHT: (C)2008,JPO&INPIT
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