发明名称 HEAT TREATMENT EQUIPMENT, HEAT TREATMENT METHOD, AND HEAT TREATMENT CONTROL DEVICE
摘要 PROBLEM TO BE SOLVED: To enhance the lifetime effectively by reducing dangling bond effectively through heat treatment control different from conventional one. SOLUTION: The equipment 10 performing heat treatment of a semiconductor processing substrate 1 comprises a treatment container 3 which is heated internally during heat treatment with the semiconductor processing substrate 1 of heat treatment object being arranged therein, a heater 15 for heating the treatment container 3 internally, and a unit 5 for supplying steam into the treatment container 3. The steam supply unit 5 supplies steam into the treatment container 3 such that the partial pressure of steam in the treatment container 3 becomes higher than the ordinary pressure during heat treatment. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008053258(A) 申请公布日期 2008.03.06
申请号 JP20060224930 申请日期 2006.08.22
申请人 IHI CORP 发明人 NAGASAWA YUTAKA;MORITA MASARU;WATANABE SATOYUKI
分类号 H01L21/324;H01L21/20 主分类号 H01L21/324
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