| 摘要 |
PROBLEM TO BE SOLVED: To adjust the in-plane tendency of an etching rate so as to reduce the variations in the shape of a concave, when the concave is provided to an insulating film. SOLUTION: A manufacturing method of a semiconductor device 100 comprises processes of forming a first interlayer insulating film 108 on a semiconductor wafer, providing a second etching stop film 110 on the first interlayer insulating film 108, and selectively forming two or more concaves on the first interlayer insulating film 108, making them penetrate through the second etching stop film 110. Here, the second etching stop layer 110 is formed so as to be varied in the thickness, according to the position on a semiconductor wafer. COPYRIGHT: (C)2008,JPO&INPIT
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