WORD LINE CONTROL METHOD TO IMPROVE READ MARGIN AND WRITE MARGIN FOR EMBEDDED MEMORIES

摘要

Apparatus to apply a voltage to the word line during a first time interval portion of the access cycle and to apply a further voltage to the word line during a further time interval portion of the access cycle and to apply the further voltage to a further word line during the first time interval portion of the access cycle and to apply the voltage to the further word line during the further time interval of the access cycle.