发明名称 METHOD OF INSPECTING DEFECT FOR ELECTROLUMINESCENCE DISPLAY APPARATUS, METHOD OF REPAIRING DETECT FOR ELECTROLUMINESCENCE DISPLAY APPARATUS, AND METHOD OF MANUFACTURING ELECTROLUMINESCENCE DISPLAY APPARATUS
摘要 A dark spot defect caused by short-circuiting in an electroluminescence element is detected based on an emission brightness or a current flowing through the electroluminescence element when an element driving transistor which controls a drive current supplied to the electroluminescence element is operated in its linear operating region and the electroluminescence element is set to an emission level. Prior to the dark spot defect inspection, the dark spot defect is screened by applying a reverse bias voltage between an anode and a cathode of the electroluminescence element. With this process, disappearance of the dark spot defect at a later time resulting in an impossibility of laser repairing or the like is prevented, and inspection and repairing efficiencies are improved. A dim spot defect caused by a characteristic variation of the element driving transistor is detected based on a current flowing through the electroluminescence element or an emission brightness when the element driving transistor is operated in its saturation operating region and the electroluminescence element is set to an emission level.
申请公布号 US2008057818(A1) 申请公布日期 2008.03.06
申请号 US20070849756 申请日期 2007.09.04
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD. 发明人 OGAWA TAKASHI
分类号 F23Q23/08;H01J9/50 主分类号 F23Q23/08
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