SELF-ALIGNED, PLANAR PHASE CHANGE MEMORY ELEMENTS AND DEVICES, SYSTEMS EMPLOYING THE SAME AND METHODS OF FORMING THE SAME

摘要

Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change material layer has a first portion with a width less than a width of a second portion of the phase change material layer. The first electrode, second electrode and phase change material layer may be oriented at least partially along a same horizontal plane.