| 摘要 |
<p>A photodetector (1) is provided with an n-type InAs substrate (12); an n-type InAs buffer layer (14) formed on the n-type InAs substrate (12); an n-type InAs light absorbing layer (16) formed on the n-type InAs buffer layer (14); an InAs<SUB>X</SUB>P<SUB>Y</SUB>Sb<SUB>1-X-Y</SUB> cap layer (18) (X=0, Y>0) formed on the n-type InAs light absorbing layer (16); a first inorganic insulating film (20) which is formed on the cap layer (18) and has an opening section (20h) in a deposition direction; a p-type impurity semiconductor layer (24) which is formed by diffusing a p-type impurity from the opening section (20h) of the first inorganic insulating film (20) and reaches an upper layer of the n-type InAs light absorbing layer (16) from the cap layer (18); and a second inorganic insulating film (22) formed on the first inorganic insulating film (20) and the p-type impurity semiconductor layer (24).</p> |
