| 摘要 |
The semiconductor layer structure includes a superlattice ( 9 ) composed of stacked layers ( 9 a , 9 b) of III-V compound semiconductors of a first (a) and at least one second type (b). Adjacent layers of different types in the superlattice ( 9 ) differ in composition with respect to at least one element, at least two layers of the same type have a different content (c<SUB>Al</SUB>, c<SUB>In</SUB>) of the at least one element, the content (c<SUB>Al</SUB>, c<SUB>In</SUB>) of the at least one element is graded within a layer ( 9 a , 9 b) of the superlattice ( 9 ), and the layers ( 9 a , 9 b) of the superlattice contain dopants in predefined concentrations, with the superlattice ( 9 ) comprising layers ( 9 a , 9 b) that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice ( 9 ) can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
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