发明名称 MANUFACTURING METHOD AND STRUCTURE FOR A SUBSTRATE WITH VERTICALLY EMBEDDED CAPACITOR
摘要 A manufacturing method and structure for substrate with vertically embedded capacitors includes the steps of providing a plurality of conductive layers having a first dielectric layer and a leading wire layer formed on the first dielectric layer, providing a plurality of composite layers having a second dielectric layer and a patterned electrode layer formed on the second dielectric layer, laminating the conductive layers and the composite layers to form a block which defines a plurality of substrates with vertically embedded capacitors and a plurality of sawing streets between the substrates, and sawing the block along the sawing streets to singularize the substrates.
申请公布号 US2008053690(A1) 申请公布日期 2008.03.06
申请号 US20070755726 申请日期 2007.05.30
申请人 LIAO GUO-CHENG 发明人 LIAO GUO-CHENG
分类号 H05K1/16;H05K3/00 主分类号 H05K1/16
代理机构 代理人
主权项
地址