METHOD FOR SELECTIVE PLASMOCHEMICAL DRY-ETCHING OF PHOSPHOSILICATE GLASS DEPOSITED ON SURFACES OF SILICON WAFERS

摘要

The invention relates to a method for selective plasmochemical dry-etching of phosphosilicate glass ((SiO₂) _xP₂O₅)_y) deposited on surfaces of silicon wafers. The aim of the invention is to provide an economical, effective, selective means for removal of phosphosilicate glass from silicon wafers which at least reduces production losses. Said aim is achieved by selectively plasmochemical dry-etching of the surfaces of crystalline silicon wafers the surfaces of which have been treated with phosphosilicate glass. A plasma formed by a plasma source and an etching gas at atmospheric pressure are directed at the phosphosilicate glass which is thus removed.