| 摘要 |
The present invention provides a new technique, in which direct drawing of ink jet is used and a gap between a source electrode and a drain electrode is narrowed down to 4 mum or less without increasing the number of processes. According to this technique, a conductive layer SD 1 A and a conductive layer SD 2 A arranged at opposed positions with a first gap are prepared by direct drawing of ink jet on upper layer of a silicon semiconductor layer SI by forming a source electrode SD 1 and a drain electrode SD 2 on a thin-film transistor, and by a laminating layer of the transparent conductive films SD 1 and SD 2 with a second gap, which is narrower than the first gap between the opposed ends of the conductive layers, to cover the upper layer of said first layer and the opposed ends of the conductive layers arranged at opposed positions. |
