发明名称 METHOD OF INSPECTING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To inspect the propriety of thickness of a sealing resin by a method other than visual inspection. <P>SOLUTION: A method of inspecting a semiconductor device determines the propriety of the thickness of the side of a resin sealing part of a semiconductor chip by the change of current-voltage characteristics due to photoelectromotive force of the semiconductor chip based on photoirradiation from sideward of the resin sealing part. In reverse directional current-reverse directional voltage characteristics, the method can determines the propriety of the thickness of the resin sealing part by setting a current value based on proper contrast and comparing the size of a threshold and a measured current since the thinner the thickness of the resin sealing is, the larger the current value is. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008051695(A) 申请公布日期 2008.03.06
申请号 JP20060229154 申请日期 2006.08.25
申请人 RENESAS TECHNOLOGY CORP 发明人 NOZAWA TOSHIYA;NIIDE AKIRA
分类号 G01B11/06;H01L21/56 主分类号 G01B11/06
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