| 摘要 |
PROBLEM TO BE SOLVED: To provide a boosting type level shifting circuit with the improved hot carrier robustness. SOLUTION: A series circuit of resistance elements R106_a and R106_b is arranged between each of the drains of a transistor Q101 at an input stage and a transistor Q103 at an output stage. The series circuit is also used as a feedback signal acquiring portion 105. A signal acquired by a connection node N106 of one of resistance elements R106_a and R106_b is adopted as a feedback signal SFB to the gate of the transistor Q103 of another side at the output stage. When the resistances element R106_a and R106_b are arranged as above, voltage between the drain and the source of the transistor Q101 can be reduced to a small value by utilizing potential difference based on an operating current at the time of switching operation, thereby, the hot carrier robustness can be improved. In addition, since a positive feedback loop from a shallow voltage level of the connection node N106 can be formed, a quick response can be obtained. Since a pinch-off region can be quickly got through, the hot carrier robustness can be improved. COPYRIGHT: (C)2008,JPO&INPIT
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