| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition system which has high availability efficiency for a material gas and can inhibit the introduction of defects into a grown film, a compound semiconductor film which has only a few defects, and its growth method. SOLUTION: In the vapor deposition system 10, a material gas G2, supplied from a second feed inlet 30 flows close to a first feed inlet 28 without residence by a gas flow adjuster 32 and reacts with a material gas G1. As a result, the material gas G1 and the material gas G2 react with a substrate W each other. That is, in the vapor deposition system 10, improvement in the availability efficiency of the material gases G1, G2 can be carried out. Moreover, since the film formation is less apt to be held at positions other than on the substrate W, the situation where defects are introduced into the compound semiconductor film M is controlled significantly. COPYRIGHT: (C)2008,JPO&INPIT
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