| 摘要 |
PROBLEM TO BE SOLVED: To achieve a laminated structure for room-temperature continuous oscillation of a Be-based group II-VI semiconductor laser using an InP substrate. SOLUTION: A basic structure of a semiconductor laser is composed by using a lattice-matched group II-VI semiconductor including Be on the InP substrate. In order to enhance carrier injection efficiency into an active layer, the laminated structure is composed as follows: the active layer, a light guide layer, and a clad layer are composed by a double-hetero structure having an I-type band lineup. It is composed so as to have the active layer, the light guide layer, and the clad layer that strengthen light trapping into the active layer. The clad layer is composed of a bulk crystal. COPYRIGHT: (C)2008,JPO&INPIT
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