| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for designing a semiconductor device capable of improving an yield of the semiconductor device. SOLUTION: The method for designing the semiconductor device comprises a step S10 of obtaining a first interconnection pattern 10 with a first design approach, a step S20 of obtaining a first breaking area CA1 (OP) by integrating the product of the presence probability D(x) of a particle and an area distribution g(x) of an occurrence of the breaking in the first interconnection pattern 10 about the size of the particle, and a step S30 of obtaining a second interconnection pattern 20 with a second design approach. The second design approach redesigns the first interconnection pattern so that the second breaking area CA2 (SH) obtained by integrating the product of the presence probability D(x)of the particle and the area distribution g(x) of the occurrence of the breaking in the interconnection of the semiconductor device having the second interconnection pattern 20 is smaller than the first breaking area CA1 (SH). COPYRIGHT: (C)2008,JPO&INPIT
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